Numerical modeling of intensity and phase noise in semiconductor lasers

Intensity and phase noise in microcavity surface-emitting semiconductor lasers

The noise characteristics of vertical-cavity surface-emitting (VCSE) lasers are studied by using the Langevin rate equations modified suitably to include the enhanced spontaneous emission occurring in such microcavity lasers. The intensity and frequency noise spectra show the effects induced by suppression of relaxation oscillations. However, such a suppression depends on the output power as we...

Theoretical Modeling of Intensity Noise in InGaN Semiconductor Lasers

This paper introduces modeling and simulation of the noise properties of the blue-violet InGaN laser diodes. The noise is described in terms of the spectral properties of the relative intensity noise (RIN). We examine the validity of the present noise modeling by comparing the simulated results with the experimental measurements available in literature. We also compare the obtained noise result...

Numerical Modeling of Vertical Cavity Semiconductor Lasers

A vertical cavity surface emitting laser (VCSEL) is a diode laser whose optical cavity is formed by growing or depositing DBR mirror stacks that sandwich an active gain region. The resulting short cavity supports lasing into a single longitudinal mode normal to the wafer, making these devices ideal for a multitude of applications, ranging fiom high-speed communication to high-power sources (fro...

Phase noise of four-wave mixing in semiconductor lasers

A simple theoretical analysis shows that the linewidth of the conjugate wave produced in four-wave mixing in semiconductor lasers is equal to the linewidth of the probe plus four times the linewidth of the pump. Experimental results in good agreement with the theory are presented. This result implies an enormous enhancement in the phase noise of the conjugate wave and sets a limitation on some ...

Amplitude or Intensity Stability in Semiconductor Lasers